Infineon IPW65R019C7 CoolMOS™ CFD7 Power Transistor: Datasheet, Application Circuit, and Design Considerations

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has led to significant advancements in semiconductor technology. At the forefront of this innovation is Infineon's CoolMOS™ family. The IPW65R019C7, a member of the latest CFD7 (CoolMOS™ FD7) series, represents a state-of-the-art solution for high-performance switching applications. This article delves into its key specifications, a typical application circuit, and crucial design considerations.

Datasheet Overview and Key Features

The datasheet for the IPW65R019C7 reveals a component engineered for excellence. It is a N-channel MOSFET built on superjunction (SJ) technology, rated for 650 V drain-source voltage and featuring an exceptionally low maximum on-state resistance (RDS(on)) of just 19 mΩ. This ultra-low RDS(on) is a cornerstone of its performance, directly leading to reduced conduction losses.

A defining feature of the CFD7 series is the integrated fast body diode. This is not a standard parasitic diode but an optimized diode with improved reverse recovery characteristics. Key diode parameters like Qrr (reverse recovery charge) and trr (reverse recovery time) are drastically reduced, which minimizes switching losses and suppresses voltage overshoots, making it exceptionally suitable for hard- and soft-switching topologies like PFC (Power Factor Correction) and LLC resonant converters.

Other notable specifications from the datasheet include:

High Peak Current Capability: Robustness for handling high inrush currents.

Low Gate Charge (Qg): Enhances switching performance and reduces driving losses.

AEC-Q101 Qualified: Suitable for automotive applications, underscoring its high reliability.

ThinLead (TOLL) Package: Offers an excellent trade-off between compact size and thermal/electrical performance. Its low package inductance is critical for high-frequency switching.

Typical Application Circuit: A PFC Stage Example

A primary application for the IPW65R019C7 is in the boost stage of a Totem Pole PFC circuit, a topology renowned for its high efficiency. In this configuration, the MOSFETs operate at high frequency.

The IPW65R019C7 is ideally used in the switching legs. Its fast body diode allows the other switch in the totem pole to operate in continuous conduction mode (CCM) without the excessive losses typically associated with a MOSFET's body diode. This enables the entire PFC stage to achieve peak efficiencies exceeding 99%. The driver circuit must be designed to provide sufficient peak current to quickly charge and discharge the low gate charge (Qg) of the MOSFET, ensuring clean and fast switching transitions.

Critical Design Considerations

1. Gate Driving: While the low Qg simplifies driving, a low-inductance, capable gate driver with a suitable voltage (typically 12-15V) is essential. A series gate resistor (a few Ohms) is necessary to control switching speed and dampen ringing but must be optimized to balance between switching loss and EMI.

2. Layout Parasitics: The high switching speed (high dv/dt and di/dt) of the CFD7 makes the PCB layout paramount. Minimizing parasitic inductance in the power loop (drain-source connection) and gate loop is critical to avoid destructive voltage spikes and oscillations. Use a tight layout, wide copper planes, and multiple vias.

3. Thermal Management: Despite its low RDS(on), managing heat is vital for reliable operation. The TOLL package has an exposed top pad that must be soldered to a PCB copper area acting as a heatsink. Proper cooling, through sufficient copper area or an external heatsink, is required to keep the junction temperature within safe limits.

4. Body Diode Utilization: In circuits like totem pole PFC, the MOSFET's body diode conducts during dead time. The optimized diode of the CFD7 handles this naturally, but dead times should still be minimized to reduce the time the diode conducts, further lowering losses.

ICGOODFIND Summary

The Infineon IPW65R019C7 CoolMOS™ CFD7 is a benchmark in high-voltage power switching, combining an ultra-low on-state resistance with a revolutionary fast body diode. It is a key enabler for achieving unprecedented levels of efficiency and power density in modern SMPS, server PSU, EV charging, and solar inverter applications. Successful implementation hinges on careful attention to high-speed gate driving and meticulous management of PCB layout parasitics.

Keywords:

1. Superjunction MOSFET

2. Integrated Fast Body Diode

3. Ultra-Low RDS(on)

4. Totem Pole PFC

5. Switching Losses