Infineon IRF7351TRPBF Dual N and P-Channel MOSFET for High-Efficiency Power Conversion

Release date:2025-10-29 Number of clicks:195

Infineon IRF7351TRPBF Dual N and P-Channel MOSFET for High-Efficiency Power Conversion

In the pursuit of maximizing power conversion efficiency, engineers are constantly challenged to reduce switching and conduction losses in their designs. The Infineon IRF7351TRPBF stands out as a highly integrated solution, combining a single N-Channel and a single P-Channel MOSFET in one compact PQFN 3.3x3.3mm package. This innovative configuration is specifically engineered to enhance performance in a variety of power management applications, most notably in synchronous buck converters and DC-DC switching regulators.

The core advantage of this dual-die design lies in its ability to simplify board layout and improve thermal performance. By pairing complementary transistors, the IRF7351TRPBF is perfectly suited for the critical switching stages in a converter circuit. The high-speed switching capabilities, characterized by low gate charge (Qg) and low reverse recovery charge (Qrr), are paramount for operating at high frequencies. This leads to reduced switching losses, allowing for smaller passive components like inductors and capacitors, and ultimately a more compact and efficient power supply design.

Furthermore, the device boasts an exceptionally low on-state resistance (RDS(on)) of just 16mΩ (max) for the N-Channel and 20mΩ (max) for the P-Channel at a gate voltage of 10V. This low RDS(on) directly translates to minimized conduction losses, ensuring more power is delivered to the load and less is wasted as heat. The resulting improvement in thermal management enhances system reliability and longevity, even in space-constrained environments.

The IRF7351TRPBF is also designed for robustness, offering an avalanche ruggedness that ensures reliability under stressful operating conditions, such as voltage overshoots and inductive load switching. Its leadless package provides superior thermal resistance from junction to board, making it an excellent choice for modern, high-density power solutions in computing, telecommunications, and consumer electronics.

ICGOOODFIND: The Infineon IRF7351TRPBF is a superior integrated power MOSFET solution that significantly boosts efficiency and power density in DC-DC conversion through its complementary pair design, low RDS(on), and exceptional high-frequency switching performance.

Keywords: Synchronous Buck Converter, Low RDS(on), High-Speed Switching, Power Density, PQFN Package

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