Infineon IPB072N15N3GATMA1 OptiMOS 5 Power MOSFET: Datasheet, Specifications, and Application Notes
The relentless pursuit of higher efficiency and power density in modern electronics has made the choice of switching components more critical than ever. Infineon Technologies addresses this challenge head-on with its OptiMOS 5 power MOSFET family, a benchmark in high-performance transistor technology. The IPB072N15N3GATMA1 stands as a prime example, offering an exceptional blend of low losses, high robustness, and superior switching performance in a compact package.
This device is engineered for applications where every watt of loss and every millimeter of board space counts. As a member of the OptiMOS 5 series, it is built on an advanced trench technology process that sets new standards for figure-of-merit (FOM).
Key Datasheet Specifications and Features
A deep dive into the datasheet reveals the technical strengths of the IPB072N15N3GATMA1:
Voltage and Current Ratings: It is a 150V N-channel MOSFET with a continuous drain current (I_D) of 72A at a case temperature (T_c) of 100°C. This high current rating makes it suitable for demanding power stages.
Exceptional Low On-Resistance: A standout feature is its incredibly low drain-source on-resistance (R_DS(on)) of just 3.7 mΩ maximum at 10 V gate-source voltage. This ultralow resistance is the primary contributor to minimizing conduction losses, leading to cooler operation and higher system efficiency.
Superior Switching Performance: The device boasts low gate charge (Q_G ~ 54 nC typ.) and low effective output capacitance (C_oss(eff) ~ 340 pF). These parameters are crucial for achieving fast switching transitions, which directly reduces switching losses and allows for higher frequency operation.
Optimized Package: Housed in the Infineon PG-TO263-3 (D2PAK) package, it offers an excellent ratio of silicon area to package size, providing efficient power dissipation through its surface-mount tab while conserving PCB real estate.
Quality and Reliability: The part number suffix "G" indicates that it is a AEC-Q101 qualified component, making it an ideal choice for automotive applications that require adherence to stringent quality and reliability standards.
Application Notes and Circuit Design Considerations
The IPB072N15N3GATMA1 is designed for high-performance switching in a variety of demanding sectors.
Primary Target Applications:
Automotive Systems: Its AEC-Q101 qualification makes it perfect for DC-DC converters in electric and hybrid vehicles, battery management systems (BMS), and motor control circuits.
Industrial Power Supplies: It is an excellent choice for server and telecom SMPS (Switch-Mode Power Supplies), particularly in the primary side of hard-switching topologies like phase-shifted full-bridge converters.
Solar Inverters: Its high voltage rating and efficiency are beneficial in maximum power point tracking (MPPT) and inverter stages.
Motor Drives and Controllers: The high current capability and robustness are ideal for driving brushless DC (BLDC) motors and other industrial motors.
Design Considerations:
1. Gate Driving: To leverage its fast switching capability, a dedicated, low-impedance gate driver IC is essential. The driver must be capable of sourcing and sinking several amps of peak current to quickly charge and discharge the MOSFET's input capacitance.
2. Thermal Management: Despite its low R_DS(on), managing heat is critical at high currents. Proper PCB layout with a large copper pour connected to the drain tab is necessary to act as a heatsink. Thermal vias can be used to transfer heat to inner or bottom layers.
3. Parasitic Inductance: Minimizing loop inductance in the power path (drain and source connections) is vital to suppress voltage spikes and ringing during switching, which can otherwise lead to electromagnetic interference (EMI) issues or even device overvoltage stress.
4. Protection: Implementing appropriate protection circuits, such as overcurrent detection and active clamping, is recommended to ensure safe operation under fault conditions.
The Infineon IPB072N15N3GATMA1 represents a top-tier solution in the 150V power MOSFET market. Its industry-leading low on-resistance, high current handling, and fast switching characteristics make it a powerhouse for designers aiming to push the limits of efficiency and power density. Whether for next-generation automotive systems or high-efficiency industrial power converters, this OptiMOS 5 device provides the performance and reliability needed to create compact, cool-running, and highly efficient electronic systems.
Keywords:
1. OptiMOS 5
2. Low R_DS(on)
3. High Efficiency
4. AEC-Q101 Qualified
5. Power Density
