Infineon IPC100N04S5L-2R6: High-Performance 40V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPC100N04S5L-2R6 stands as a testament to these ideals, representing a significant advancement in power MOSFET technology. As part of the renowned OptiMOS™ 5 40V family, this component is engineered to deliver exceptional efficiency and power density in a wide array of applications, from server and telecom power supplies to motor drives and battery management systems.

The core of this MOSFET's superiority lies in its ultra-low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 1.0 mΩ at 10 V, it minimizes conduction losses significantly. This allows for more current to be handled in a smaller footprint, reducing the need for heat sinks and enabling more compact and lighter system designs. Furthermore, its low gate charge (Q G) ensures switching losses are drastically reduced, which is critical for high-frequency operation, leading to higher overall system efficiency.

Packaged in the robust SuperSO8 (2R6), the IPC100N04S5L-2R6 offers superior thermal and electrical performance compared to standard SO-8 packages. The package incorporates an exposed pad that enhances heat dissipation, allowing the device to operate reliably under high-stress conditions. This makes it an ideal choice for space-constrained applications where thermal management is a challenge.

Designers will appreciate the device's high robustness and reliability, backed by Infineon's quality and expertise. It features a high avalanche ruggedness and is qualified according to the highest automotive standards, ensuring long-term performance even in demanding environments.

ICGOOODFIND: The Infineon IPC100N04S5L-2R6 is a top-tier power MOSFET that sets a new benchmark for performance. Its combination of ultra-low R DS(on), excellent switching characteristics, and superior thermal packaging makes it an indispensable component for engineers striving to create the next generation of efficient and compact power solutions.

Keywords: OptiMOS™ 5, Ultra-low R DS(on), High Power Density, SuperSO8, High Efficiency.